PM-R65W-P PANASONIC u-shape type, R-shape, 6mm, PNP, connector, two mounting holes View larger
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PM-R65W-P PANASONIC u-shape type, R-shape, 6mm, PNP, connector, two mounting holes

PM-R65W-P

PANASONIC

u-shape type, R-shape, 6mm, PNP, connector, two mounting holes

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Miniature Photoelectric Sensors - PANASONIC > PM thru-beam microphotosensors - PANASONIC

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Product Number PM-R65W-P
Part Number PM-R65W-P
Product Amplifier Built-in / U-shaped Micro Photoelectric Sensor
Details Compact / Connector built-in type [R type]
Product name Amplifier Built-in / U-shaped Micro Photoelectric Sensor [Compact / Connector built-in type] PM-65

Item Specifications
Product Number PM-R65W-P
Part Number PM-R65W-P
CE marking directives EMC Directive, RoHS Directive
Sensing range 6 mm0.236 in(fixed)
Minimum sensing object 0.8 × 1.2 mm0.031 × 0.047 inopaque object
Hysteresis 0.05 mm0.002 inor less
Repeatability 0.01 mm0.0004 inor less
Supply voltage 5 to 24 V DC ±10 % Ripple P-P 10 % or less
Current consumption 15 mA or less
Output PNP open-collector transistor
・Maximum source current: 50 mA
・Applied voltage: 30 V DC or less (between output and + V)
・Residual voltage: 2 V or less (at 50 mA source current), 1 V or less (at 16 mA source current)
Output:Output operation Incorporated with 2 outputs: Light-ON / Dark-ON
Output:Short-circuit protection Incorporated
Response time Under light received condition: 20 μs or less
Under light interrupted condition: 80 μs or less
(Maximum response frequency: 3 kHz)(Note)
(Note) The response frequency is the value when the disc, given in the figure below, is rotated.
Operation indicator Orange LED (lights up under light received condition)
Pollution degree 3
Protection IP40 (IEC)
Ambient temperature -25 to +55 ℃-13 to +131 ℉(No dew condensation or icing allowed), Storage: -30 to +80 ℃-22 to +176 ℉
Ambient humidity 5 to 85 % RH, Storage: 5 to 95 % RH
Ambient illuminance Fluorescent light: 1,000 ℓx at the light-receiving face
Voltage withstandability 1,000 V AC for one min. between all supply terminals connected together and enclosure
Insulation resistance 20 MΩ, or more, with 250 V DC megger between all supply terminals connected together and enclosure
Vibration resistance 10 to 2,000 Hz frequency, 1.5 mm0.059 indouble amplitude (maximum acceleration 196 m/s2) in X, Y and Z directions for two hours each
Shock resistance 15,000 m/s2acceleration (1,500 G approx.) in X, Y and Z directions three times each
Emitting element Infrared LED (Peak emission wavelength: 855 nm0.034 mil, non-modulated)
Material Enclosure: PBT
Display section: Polycarbonate
Cable length Extension up to total 100 m328.084 ftis possible with 0.3 mm2, or more, cable.
(Note) If the cable is extended to 20 m65.617 ftor longer, confirm that the supply voltage at the end of the cable attached to the sensor is 4.5 V or higher.
Weight Net weight: 3 g approx.
Gross weight: 3 g approx.
Remark ・Where measurement conditions have not been specified precisely, the conditions used were an ambient temperature of +23 ℃+73.4 ℉.
・Mounting-compatible with our conventional models [PM-R54P]

Datasheet - PDF

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